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Other articles related with "AlGaN/GaN HFET"：
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127701 |
Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平) |
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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator |
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Chin. Phys. B
2022 Vol.31 (12): 127701-127701
[Abstract]
(257)
[HTML 0 KB]
[PDF 1297 KB]
(54)
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78503 |
Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平) |
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Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2018 Vol.27 (7): 78503-078503
[Abstract]
(868)
[HTML 1 KB]
[PDF 1160 KB]
(167)
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127102 |
Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰) |
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Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (12): 127102-127102
[Abstract]
(590)
[HTML 0 KB]
[PDF 495 KB]
(197)
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37201 |
Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平) |
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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (3): 37201-037201
[Abstract]
(690)
[HTML 1 KB]
[PDF 311 KB]
(339)
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87308 |
Jia-Qi Zhang(张家琦), Lei Wang(王磊), Liu-An Li(李柳暗), Qing-Peng Wang(王青鹏), Ying Jiang(江滢), Hui-Chao Zhu(朱慧超), Jin-Ping Ao(敖金平) |
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Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate |
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Chin. Phys. B
2016 Vol.25 (8): 87308-087308
[Abstract]
(719)
[HTML 1 KB]
[PDF 1061 KB]
(330)
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636 |
Chang Yuan-Cheng (常远程), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures |
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Chin. Phys. B
2006 Vol.15 (3): 636-640
[Abstract]
(1741)
[HTML 0 KB]
[PDF 261 KB]
(588)
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